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J Radiat Prot > Volume 34(2); 2009 > Article
Journal of Radiation Protection 2009;34(2):83-0.
CHARACTERISTICS EVALUATION AND GROWTH OF $BI_4GE_3O_{12}$ SINGLE CRYSTAL BY CZOCHRALSKI METHOD
Cho, Yun-Ho;Kim, Yong-Kyun;Lee, Woo-Gyo;Kang, Byoung-Hwi;Kim, Jong-Kyung;Lee, Dong-Hoon;Park, Jae-Woo;
ABSTRACT
The single crystal scintillator of bismuth germinate ($Bi_4Ge_3O_{12}$:BGO) was successfully grown by the conventional Czochraski technique. The characteristics of the grown BGO were evaluated and presented on the excitation, emission responses and energy spectra of the $gamma$-rays from $^{241}Am$, $^{133}Ba$, $^{57}Co$, $^{22}Na$, $^{137}Cs$ and $^{54}Mn$ radio-isotopes. The energy resolution of grown BGO, $Delta$E/E, was estimated to be 12.1% at 662 keV of $gamma$-ray for $^{137}Cs$ nuclide. Compared to the commercial BGO crystal, we confirmed that the grown BGO has a good performance and is comparable to reference one.
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