In this paper, we discussed the fabrication and characterization of bulk type CdZnTe detector for pocket surveymeter. The resistivity of CdZnTe single crystal grown by the High Pressure Bridgman method is in the mid of $10^9$ ohm-cm. The detector structure is Au/CdZnTe/Au and gold electrode is formed by electroless deposition method. Resolutions of 4.8keV and 2.2keV were observed at 22.2keV line of $^{109}Cd;and;59.6keV$ line of $^{241}Am$ at room temperature, respectively. We also constructed the small size pocket surveymeter using home made CdZnTe detector. It shows the good linearity over a range from 1mR/hr to 10R/hr with deviation less than 5%. The sensitivity of the surveymeter developed is $2.2{times}10^3 cps/Rad;hr^{-1}$ for the 662keV of $^{l37}Cs;{gamma}-ray$
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